STM4432

Gre r Pr STM4432 Ver 1.0 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 40V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID 12A R DS(ON) (m ) Max 11 @ VGS=10V 15 @ VGS=4.5V S O-8 1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous b a Limit 40 ±20 TA=25°C TA=70°C 12 9.6 60 121 TA=25°C TA=70°C 2.5 1.6 -55 to 150 Units V V A A A mJ W W °C -Pulsed Sigle Pulse Avalanche Energy d Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 50 °C/W Details are subject to change without notice. Nov,03,2010 1 www.samhop.com.tw STM4432 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=32V , VGS=0V Min 40 Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VGS= ±20V , VDS=0V 1 ±100 uA nA VDS=VGS , ID=250uA VGS=10V , ID=12A VGS=4.5V , ID=10A VDS=10V , ID=12A 1 1.7 9 12 25 3 11 15 V m ohm m ohm S pF pF pF DYNAMIC CHARACTERISTICS Input Capacitance CISS Out...