MBR30100FCT

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Diodes MBR30100FCT SCHOTTKY BARRIER RECTIFIER TO-220F FEATURES z Schottky Barrier Chip z Guard Ring Die Construction for Transient Protection z Low Power Loss,High Efficiency z High Surge Capability z High Current Capability and Low Forward Voltage Drop z For Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity Protection Applications MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol VRRM VRWM VR VR(RMS) IO IFSM PD RΘJA Tj Tstg Parameter Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage RMS reverse voltage Average rectified output current Non-Repetitive peak forward surge current 8.3ms half sine wave Power dissipation Thermal resistance from junction to ambient Junction temperature Storage temperature 1. ANODE 2. CATHODE 3. ANODE Value 100 70 30 200 2 50 125 -55~+150 Unit V V A A W ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Reverse voltage Reverse current Forward voltage Typical total capacitance Symbol V(BR) IR VF1 VF2* Ctot Test conditions IR=1mA VR=100V IF=15A IF=30A VR=4V,f=1MHz 300 Min 100 0.1 1 1.05 Typ Max Unit V mA V V pF *Pulse test C,Jan,2014 Typical Characteristics Forward 30000 MBR30100FCT Reverse 1000 Characteristics Characteristics 10000 (mA) Ta=100℃ (uA) REVERSE CURRENT IR 1000 100 FORWARD CURRENT IF 10 100 T= a 10 0℃ T =2 a 5℃ 1 10 Ta=25℃ 1 0 100 200 300 400 500...