DATA SHEET
SILICON POWER TRANSISTOR
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2SD2161
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTI...
DATA SHEET
SILICON POWER
TRANSISTOR
www.DataSheet4U.com
2SD2161
NPN SILICON EPITAXIAL
TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
The 2SD2161 is a Darlington power
transistor that can directly drive from the IC output. This
transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipment. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost.
ORDERING INFORMATION
Ordering Name 2SD2161 Package Isolated TO-220
(Isolated TO-220)
FEATURES
High hFE due to Darlington connection hFE ≥ 2,000 (VCE = 2.0 V, IC = 2.0 A) Full mold package that does not require an insulating board or insulation bushing
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT Tj Tstg TC = 25°C TA = 25°C PW ≤ 300 µs, duty cycle ≤ 10% Conditions Ratings 100 100 7.0 ±5.0 ±10 0.5 20 2.0 150 −55 to +150 Unit V V V A A A W W °C °C
INTERNAL EQUIVALENT CIRCUIT
1. Base 2. Collector 3. Emitter
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