Data Sheet
Rev.1.2
23.03.2012
1024MB DDR3 – SDRAM SO-DIMM
204 Pin SO-DIMM SGN01G64D2BG1SA-xxRT 1GByte in FBGA Technol...
Data Sheet
Rev.1.2
23.03.2012
1024MB DDR3 – SDRAM SO-DIMM
204 Pin SO-DIMM SGN01G64D2BG1SA-xxRT 1GByte in FBGA Technology RoHS compliant
Features:
204-pin 64-bit DDR3 Small Outline Dual-In-Line Double Data Rate Synchronous DRAM module Module organization: single rank 128M x 64 VDD = 1.5V ±0.075V, VDDQ 1.5V ±0.075V 1.5V I/O ( SSTL_15 compatible) Fly-by-bus with termination for C/A & CLK bus 2 On-board I C temperature sensor with integrated serial presence-detect (SPD) EEPROM Gold-contact pads This module is fully pin and functional compatible to the JEDEC PC3-12800 spec. and JEDEC- Standard MO-268. (see www.jedec.org) The pcb and all components are manufactured according to the RoHS compliance specification [EU Directive 2002/95/EC Restriction of Hazardous Substances (RoHS)]
Options: Data Rate / Latency DDR3 1066 MT/s CL7 DDR3 1333 MT/s CL9 DDR3 1600 MT/s CL11 Module Density 1024MB with 8 dies and 1 rank Standard Grade (TA) (TC) (TA) (TC) (TA) (TC) 0°C to 70°C 0°C to 85°C 0°C to 85°C 0°C to 95°C *) -40°C to 85°C -40°C to 95°C *) Marking -BB -CC -DC
DDR3 - SDRAM component Samsung K4B1G0846G 128Mx8 DDR3 SDRAM in PG-TFBGA-78 package Grade E 8-bit pre-fetch architecture Programmable CAS Latency, CAS Write Latency, Additive Grade W Latency, Burst Length and Burst Type. On-Die-Termination (ODT) and Dynamic ODT for improved *) The refresh rate has to be doubled when 85°C
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