SEN06464H2CF1SA-xxR

Data Sheet Rev.1.1 24.11.2010 512MB DDR2 – SDRAM SO-DIMM Features: 200 Pin SO-DIMM SEN06464H2CF1SA-xxR Up to PC2-6400 in FBGA Technology RoHS compliant         200-pin 64-bit DDR2 Small Outline, Dual-In-Line Double Data Rate Synchronous DRAM Module Module organization: single rank 64M x 64 VDD = 1.8V ±0.1V, VDDQ 1.8V ±0.1V 1.8V I/O ( SSTL_18 compatible) Serial Presence Detect (SPD) EEPROM Gold-contact pad This module is fully pin and functional compatible to the JEDEC PC2-6400 spec. and JEDEC- Standard MO-224. (see www.jedec.org) The pcb and all components are manufactured according to the RoHS compliance specification [EU Directive 2002/95/EC Restriction of Hazardous Substances (RoHS)] DDR2 - SDRAM component Samsung K4T1G164QF-BCF7 64Mx16 DDR2 SDRAM in FBGA-84 package Four bit prefetch architecture DLL to align DQ and DQS transitions with CK Eight internal device banks for concurrent operation Programmable CAS latency (CL) Posted CAS additive latency (AL) WRITE latency = READ latency – 1 tCK Programmable burst length: 4 or 8 Adjustable data-output drive strength On-die termination (ODT) Options:  Data Rate / Latency DDR2 667 MT/s CL5 DDR2 800 MT/s CL6  Module Density 512MB with 4 dies and 1 rank Standard Grade Grade E Grade I Grade W (tA) (tC) (tA) (tC) (tA) (tC) (tA) (tC) 0°C to 70°C 0°C to 85°C 0°C to 85°C 0°C to 95°C *) -25°C to 85°C -25°C to 95°C *) -40°C to 85°C -40°C to 95°C *) Marking -30 -25             *) The refresh rate has to be double...