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H5MS2562JFR-J3M

Hynix Semiconductor

Mobile DDR SDRAM 256Mbit (16M x 16bit)


Description
256Mbit MOBILE DDR SDRAM based on 4M x 4Bank x16 I/O Specification of 256Mb (16Mx16bit) Mobile DDR SDRAM Memory Cell Array - Organized as 4banks of 4,194,304 x16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev...



Hynix Semiconductor

H5MS2562JFR-J3M

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