Si2319DS

Si2319DS Vishay Siliconix P-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) −40 FEATURES D TrenchFETr Power MOSFET ID (A)b rDS(on) (W) 0.082 @ VGS = −10 V 0.130 @ VGS = −4.5 V APPLICATIONS D Load Switch −3.0 −2.4 TO-236 (SOT-23) G 1 3 D Ordering Information: Si2319DS-T1 Si2319DS-T1—E3 (Lead Free) S 2 Top View Si2319DS (C9)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b Power Dissipationb Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C TA= 25_C TA= 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 sec −40 "20 −3.0 −2.4 −12 −1.0 1.25 0.8 Steady State Unit V −2.3 −1.85 A −0.62 0.75 0.48 −55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc Maximum Junction-to-Foot (Drain) Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 5 sec. c. Surface Mounted on FR4 Board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 72315 S-40844—Rev. B, 03-May-04 www.vishay.com RthJA RthJF Symbol Typical 75 120 40 Maximum 100 166 50 Unit _C/W 1 Si2319DS Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage ...