Schottky Barrier Diode
RB162MM-60
lApplication General rectification lDimensions (Unit : mm)
1.6±0.1 0.1±0.1 0.05
D...
Schottky Barrier Diode
RB162MM-60
lApplication General rectification lDimensions (Unit : mm)
1.6±0.1 0.1±0.1 0.05
Data Sheet
lLand Size Figure (Unit : mm)
1.2
0.85
lFeatures 1) Small power mold type (PMDU) 2) High reliability 3) Low VF
0.9±0.1
0.12 3.5±0.2
2.6±0.1
PMDU
lStructure
0.8±0.1
Cathode
ROHM : PMDU JEDEC : SOD-123FL : Manufacture Date
lConstruction Silicon epitaxial planar type
lTaping Dimensions (Unit : mm)
4.0±0.1 2.0±0.05 φ 1.55±0.05 f1.55 0.05
1.75±0.1
Anode
0.25±0.05
3.5±0.05
8.0±0.2
1.81±0.1
4.0±0.1
φ1.0 1.0±0.1 f 0.1
3.71±0.1
1.5MAX
lAbsolute Maximum Ratings (Tc= 25°C) Parameter Repetitive Peak Reverse Voltage Reverse Voltage Average Forward Rectified Current
Non-repetitive Forward Current Surge Peak
Symbol VRM VR Io IFSM Tj Tstg
Conditions Duty≦0.5 Direct Reverse Voltage
Glass epoxi mounted, 60Hz half sin Wave, resistive load, Tc=90°C max. 60Hz half sin wave, one cycle, Non-repetitive at Ta=25°C
Limits 60 60 1 20 150 -40 to +150
3.05
Unit V V A A °C °C
Operating Junction Temperature Storage Temperature
-
lElectrical Characteristics (Tj = 25°C) Parameter Forward Voltage Reverse Current Symbol VF1 IR Conditions IF=1.0A VR=60V Min. Typ. Max. Unit 0.65 100 V mA
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1/5
2014.08 - Rev.C
RB162MM-60
lElectrical Characteristic Curves
Data Sheet
10
100000
1
Tj = 150°C
REVERSE CURRENT : IR(mA)
FORWARD CURRENT : IF(A)
10000 1000 100 10 1 0.1 0.01 0.001
Tj = 150°C
Tj = 125°...