Document
R1LV3216R Series
32Mb Advanced LPSRAM (2M word x 16bit / 4M word x 8bit)
REJ03C0367-0100 Rev.1.00 2009.05.07
Description
The R1LV3216R Series is a family of low voltage 32-Mbit static RAMs organized as 2,097,152-word by 16-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LV3216R Series is suitable for memory applications where a simple interfacing, battery operating and battery backup are the important design objectives. The R1LV3216R Series is provided in 48-pin thin small outline package [TSOP (I): 12mm x 20mm with pin pitch of 0.5mm] and 52-pin micro thin small outline package [µTSOP (II): 10.79mm x 10.49mm with pin pitch of 0.4mm]. It gives the best solution for compaction of mounting area as well as flexibility of wiring pattern of printed circuit boards.
Features
• • • • • • • • Single 2.7~3.6V power supply Small stand-by current: 4 µA (3.0V, typical) No clocks, No refresh All inputs and outputs are TTL compatible. Easy memory expansion by CS1#, CS2, LB# and UB# Common Data I/O Three-state outputs: OR-tie Capability OE# prevents data contention on the I/O bus
Ordering Information
Type No. R1LV3216RSA-5S% R1LV3216RSA-7S% R1LV3216RSD-5S% R1LV3216RSD-7S% Access time 55 ns 70 ns 55 ns 70 ns Package 12mm x 20mm 48-pin plastic TSOP (I) (normal-bend type) (48P3R) 350 mil 52-pin plastic μ-TSOP (II) (normal-bend type) (52PTG)
% R I
% - Temperature version; see table below Temperature Range 0 ~ +70 °C -40 ~ +85 °C
REJ03C0367-0100, Rev.1.00, 2009.05.07 Page 1 of 16
R1LV3216R Series
Pin Arrangement
A15 A14 A13 A12 A11 A10 A9 A8 A19 CS1# WE# NC NC Vcc CS2 NC A20 A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 52 51 50 49 48 47 46 45 44 43 42 41 A16 BYTE# UB# Vss LB# DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 NC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# Vss NC A0
52-pin μTSOP (II)
40 39 38 37 36 35 34 33 32 31 30 29 28 27
A15 A14 A13 A12 A11 A10 A9 A8 A19 A20 WE# CS2 NC UB# LB# A18 A17 A7 A6 A5 A4 A3 A2 A1
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
48 47 46 45 44 43 42 41 40 39 38
A16 BYTE# Vss DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 Vcc DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# Vss CS1# A0
48-pin TSOP (I)
37 36 35 34 33 32 31 30 29 28 27 26 25
REJ03C0367-0100, Rev.1.00, 2009.05.07 Page 2 of 16
R1LV3216R Series
Pin Description
Pin name Vcc Vss A0 to A20 A-1 to A20 DQ0 to DQ15 CS1# CS2 WE# OE# LB# UB# BYTE# NC Function Power supply Ground Address input (word mode) Address input (byte mode) Data input/output Chip select 1 Chip select 2 Write enable Output enable Lower byte enable Upper byte enable Byte control mode enable Non connection
REJ03C0367-0100, Rev.1.00, 2009.05.07 Page 3 of 16
R1LV3216R Series
Block Diagram
A0 A1
ADDRESS BUFFER ROW DECODER MEMORY ARRAY 2M-word x16-bit or 4M-word x 8-bit
DQ0 DQ1
A20
DQ BUFFER DATA SENSE / WRITE AMPLIFIER SELECTOR
DQ7
DQ8
COLUMN DECODER DQ BUFFER CLOCK
DQ9
CS2 CS1# LB#
GENERATOR
DQ15 / A -1
X8 / x16
Vcc Vss
UB#
CONTROL
BYTE# WE# OE#
REJ03C0367-0100, Rev.1.00, 2009.05.07 Page 4 of 16
R1LV3216R Series
Operation Table
CS1# H X X L L L L L L L L L L L L CS2 X L X H H H H H H H H H H H H BYTE# X X H H H H H H H H H H L L L LB# X X H L L L H H H L L L L L L UB# X X H H H H L L L L L L L L L WE# X X X L H H L H H L H H L H H OE# X X X X L H X L H X L H X L H DQ0~7 High-Z High-Z High-Z Din Dout High-Z High-Z High-Z High-Z Din Dout High-Z Din Dout High-Z DQ8~14 High-Z High-Z High-Z High-Z High-Z High-Z Din Dout High-Z Din Dout High-Z High-Z High-Z High-Z DQ15 High-Z High-Z High-Z High-Z High-Z High-Z Din Dout High-Z Din Dout High-Z A-1 A-1 A-1 Operation Stand-by Stand-by Stand-by Write in lower byte Read in lower byte Output disable Write in upper byte Read in upper byte Output disable Word write Word read Output disable Byte write Byte read Output disable
Note 1. H: VIH L:VIL X: VIH or VIL 2. When apply BYTE# =“L”, please assign LB#=UB#=“L”.
Absolute Maximum Ratings
Parameter Power supply voltage relative to Vss Terminal voltage on any pin relative to Vss Power dissipation Operation temperature Storage temperature range Storage temperature range under bias Symbol Vcc VT PT Topr*3 Tstg Tbias*3 R ver. I ver. R ver. I ver. Value -0.5 to +4.6 -0.5*1 to Vcc+0.3*2 0.7 0 to +70 -40 to +85 -65 to 150 0 to +70 -40 to +85 unit V V W °C °C °C °C °C
Note 1. –2.0V in case of AC (Pulse width ≤30ns) 2. Maximum voltage is +4.6V. 3. Ambient temperature range depends on R/I-version. Please see table on page 1.
REJ03C0367-0100, Rev.1.00, 2009.05.07 Page 5 of 16
R1LV3216R Series
Recommended Operating Conditions
Parameter Supply voltage Input high voltage Input low voltage Ambient temperature range R ver. Symbol Vcc Vss VIH VIL Min. 2.7 0 2.4 -0.2 0 Typ. 3.0 0 Max. 3.6 0
Vcc+0.2
Unit V V V V °C
Note
0.4 +70
Ta I ver. -40 +85 °C Note 1. –2.0V in case of AC (Pulse width ≤ 30ns) 2. Ambient temperature range depends on R/I-version. Please see table on page 1.
1 2 .