R1LV0414D

R1LV0414D Series 4M SRAM (256-kword × 16-bit) REJ03C0312-0100 Rev.1.00 May.24.2007 Description The R1LV0414D is a 4-Mbit static RAM organized 256-kword × 16-bit, fabricated by Renesas’s high-performance 0.15µm CMOS and TFT technologies. R1LV0414DSeries has realized higher density, higher performance and low power consumption. The R1LV0414D Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It has packaged in 44-pin TSOP II. Features Single 3.0 V supply: 2.7 V to 3.6 V Fast access time: 55/70 ns (max) Power dissipation:  Standby: 3 µW (typ) (VCC = 3.0 V) Equal access and cycle times Common data input and output.  Three state output Battery backup operation. Temperature range: -40 to +85°C Ordering Information Type No. R1LV0414DSB-5SI R1LV0414DSB-7LI Access time 55 ns 70 ns Package 400-mil 44-pin plastic TSOP II (44P3W-H) Rev.1.00, May.24.2007, page 1 of 12 R1LV0414D Series Pin Arrangement 44-pin TSOP A4 A3 A2 A1 A0 CS# I/O0 I/O1 I/O2 I/O3 V CC V SS I/O4 I/O5 I/O6 I/O7 WE# A17 A16 A15 A14 A13 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 (Top view) 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE# UB# LB# I/O15 I/O14 I/O13 I/O12 VSS VCC I/O11 I/O10 I/O9 I/O8 NC A8 A9 A10 A11 A12 Pin Description Pin name A0 to A17 I/O0 to I/O15 CS# (CS) OE# (OE) WE# (WE) LB# (LB) UB# (UB) VCC VSS NC Function Address input Data input/output Chip select Output enable Write enable ...