R1RP0404DGE-2LR

R1RP0404D Series 4M High Speed SRAM (1-Mword × 4-bit) REJ03C0116-0100Z Rev. 1.00 Mar.12.2004 Description The R1RP0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed and high density memory, such as cache and buffer memory in system. The R1RP0404D is packaged in 400-mil 32-pin SOJ for high density surface mounting. Features Single 5.0 V supply: 5.0 V ± 10% Access time 12 ns (max) Completely static memory  No clock or timing strobe required Equal access and cycle times Directly TTL compatible  All inputs and outputs Operating current: 130 mA (max) TTL standby current: 40 mA (max) CMOS standby current : 5 mA (max) : 1.0 mA (max) (L-version) Data retention current: 0.5 mA (max) (L-version) Data retention voltage: 2.0 V (min) (L-version) Center VCC and VSS type pin out Rev.1.00, Mar.12.2004, page 1 of 11 R1RP0404D Series Ordering Information Type No. R1RP0404DGE-2PR R1RP0404DGE-2LR Access time 12 ns 12 ns Package 400-mil 32-pin plastic SOJ (32P0K) Pin Arrangement 32-pin SOJ A0 A1 A2 A3 A4 CS# I/O1 VCC VSS I/O2 WE# A5 A6 A7 A8 A9 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 (Top view) 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 A19 A18 A17 A16 A15 OE# I/O4 VSS VCC I/O3 A14 A13 A12 A11 A10 NC Pin Description Pin name A0 to A19 I/O1 to I/...