H27U4G6F2D

APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 1 H27(U_S)4G8_6F2D 4 Gbit (512M x 8 bit) NAND Flash 4Gb NAND FLASH H27U4G8_6F2D H27S4G8_6F2D Rev 1.4 / OCT. 2010 1 *ba53f20d-240c* B34416/177.179.157.84/2010-10-08 10:08 APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 1 H27(U_S)4G8_6F2D 4 Gbit (512M x 8 bit) NAND Flash Document Title 4 Gbit (512M x 8 bit) NAND Flash Memory Revision History Revision No. 0.0 1.0 1.1 1.2 1.3 1.4 History Initial Draft ICC2: Saparate Cache case and normal case tCBSYW value update (5us-Typ.) tCEA -> tCR Typo correction ICC2 Typcal delete (because of same as max. value) Adding Bad Block Marking Information Parameter page update Fig. 37 correction at least five times -> 3 times in 3.21 Typo correction D1 -> D in Table. 29 Draft Date Jan. 12. 2010 Mar. 04. 2010 Mar. 31. 2010 April 14. 2010 June 29. 2010 OCT. 8. 2010 Remark Preliminary Rev 1.4 / OCT. 2010 2 *ba53f20d-240c* B34416/177.179.157.84/2010-10-08 10:08 APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 1 H27(U_S)4G8_6F2D 4 Gbit (512M x 8 bit) NAND Flash FEATURES SUMMARY DENSITY - 4Gbit: 4096blocks Nand FLASH INTERFACE - NAND Interface - ADDRESS / DATA Multiplexing SUPPLY VOLTAGE - Vcc = 3.0/1.8V Volt core supply voltage for Program, Erase and Read operations. MEMORY CELL ARRAY - X8: (2K + 64) bytes x 64 pages x 4096 blocks - X16: (1k+32) words x 64 pages x 2048 blocks PAGE SIZE - X8: (2048 + 64 spare) byt...