H27S2G8F2C

APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 1 H27(U_S)2G8_6F2C 2 Gbit (256M x 8 bit) NAND Flash 2Gb NAND FLASH H27U2G8_6F2C H27S2G8_6F2C Rev 0.0 / Apr. 2010 1 *da93e538-013c* B34416/177.179.157.84/2010-06-28 11:19 APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 1 H27(U_S)2G8_6F2C 2 Gbit (256M x 8 bit) NAND Flash Document Title 2 Gbit (256M x 8 bit) NAND Flash Memory Revision History Revision No. 0.0 0.1 History Initial Draft Add FBGA Package Draft Date Apr. 19. 2010 May. 28. 2010 Remark Preliminary Rev 0.0 / Apr. 2010 2 *da93e538-013c* B34416/177.179.157.84/2010-06-28 11:19 APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 1 H27(U_S)2G8_6F2C 2 Gbit (256M x 8 bit) NAND Flash FEATURES SUMMARY DENSITY - 2Gbit: 2048blocks Nand FLASH INTERFACE - NAND Interface - ADDRESS / DATA Multiplexing SUPPLY VOLTAGE - Vcc = 3.0/1.8V Volt core supply voltage for Program, Erase and Read operations. MEMORY CELL ARRAY - X8: (2K + 64) bytes x 64 pages x 2048 blocks - X16: (1k+32) words x 64 pages x 2048 blocks PAGE SIZE - X8: (2048 + 64 spare) bytes - X16:(1024 + 32spare) Words Block SIZE - X8: (128K + 4K spare) bytes - X16:(64K + 2K spare) Words PAGE READ / PROGRAM - Random access: 25us (Max) - Sequential access: 25ns / 45ns (3.0V/1.8V, min.) - Program time(3.0V/1.8V): 200us / 250us (Typ) - Multi-page program time (2 pages): 200us / 250us (3.0V/1.8V, Typ.) BLOCK ERASE / MULTIPLE BLOCK ERASE - Block e...