Power Transistors
2SB945
Silicon PNP epitaxial planar type
For power switching Complementary to 2SD1270
0.7±0.1 10.0±0....
Power
Transistors
2SB945
Silicon
PNP epitaxial planar type
For power switching Complementary to 2SD1270
0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2
Unit: mm
4.2±0.2
s Features
q q q q
Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings –130 –80 –7 –10 –5 40 2 150 –55 to +150 Unit V V V A A W ˚C ˚C
7.5±0.2
16.7±0.3
φ3.1±0.1
4.0
1.4±0.1
1.3±0.2
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
14.0±0.5
0.8±0.1
0.5 +0.2 –0.1
2.54±0.25 5.08±0.5 1 2 3
1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a)
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*h
(TC=25˚C)
Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf IC = –2A, IB1 = – 0.2A, IB2 = 0.2A Conditions VCB = –100V, IE = 0 VEB = –5V, IC = 0 IC = –10mA, IB = 0 VCE = –2V, IC = – 0.1A VCE = –2V, IC = –2A IC = –4A, IB = – 0.2A IC = –4A, IB = – 0.2A VCE = ...
