Document
AP02N70EJ
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ ESD Improved Capability ▼ Simple Drive Requirement
G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
D
BVDSS RDS(ON) ID
700V 7Ω 1.6A
S
Description
AP02N70 from APEC provide the designer with the best combination of fast switching , low on-resistance and cost-effectiveness. The TO-251 package is widely preferred for commercial-industrial through hole applications and suited for AC/DC converters.
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current
1
Rating 700 ±20 1.6 1 6.4 45
2
Units V V A A A W mJ A ℃ ℃
Total Power Dissipation Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range
13 1.6 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 2.8 110 Units ℃/W ℃/W
Data & specifications subject to change without notice
1 200712241
AP02N70EJ
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current Drain-Source Leakage Current (Tj=150 C)
o
o
Test Conditions VGS=0V, ID=1mA
3
Min. 700 2 -
Typ. 0.65 17 1.5 11 10 8 21 15 170 30 20
Max. Units 7 4 10 100 ±10 30 300 V Ω V S uA uA uA nC nC nC ns ns ns ns pF pF pF
VGS=10V, ID=0.8A VDS=VGS, ID=250uA VDS=10V, ID=0.8A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS=±20V ID=0.8A VDS=560V VGS=10V VDD=350V ID=0.8A RG=4.7Ω,VGS=10V RD=438Ω VGS=0V VDS=25V f=1.0MHz
Gate-Source Leakage Total Gate Charge
3
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
3
Source-Drain Diode
Symbol VSD trr Qrr Parameter Forward On Voltage
3 3
Test Conditions IS=1.6A, VGS=0V IS=1.6A, VGS=0V, dI/dt=100A/µs
Min. -
Typ. 340 2550
Max. Units 1.5 V ns nC
Reverse Recovery Time
Reverse Recovery Charge
Notes: 1.Pulse width limited by Max. junction temperature. 2.Starting Tj=25 C , VDD=50V , L=10mH , RG=25Ω , IAS=1.6A. 3.Pulse test
o
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2
AP02N70EJ
2
2
T C =25 C
2
o
ID , Drain Current (A)
ID , Drain Current (A)
10V 9.0V 8.0V 7.0V
T C =150 C
2
o
10V 9.0V 8.0V 7.0V V G =6.0V
2
1
V G =6.0V
1
1
1
0
0
0
0 0.0 4.0 8.0 12.0 16.0 20.0 24.0 28.0 0.0 4.0 8.0 12.0 16.0 20.0 24.0 28.0
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.4
2.0
I D =0.8A V G =10V Normalized BVDSS (V)
1.2 1.6
Normalized RDS(ON)
1
1.2
0.8
0.8
0.6
-50 0 50 100 150
0.4 -50 0 50 100 150
Tj , Junction Temperature ( ℃ )
T j , Junction Temperature ( ℃ )
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
1.2
5
T j =150 o C
4
T j =25 C
1.1
o
3
Normalized VGS(th) (V)
0.2 0.4 0.6 0.8 1 1.2
1.0
IS(A)
2
0.9
1
0.8
0
0.7 -50 -25 0 25 50 75 100 125 150
V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( ℃ )
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
3
AP02N70EJ
f=1.0MHz
12 1000
I D =0.8A
10
VGS , Gate to Source Voltage (V)
8
C (pF)
V DS =560V
6
C iss
100
4
C oss
2
C rss
10 0 4 8 12 16 20 24 1 5 9 13 17 21 25 29
0
Q G , Total Gate Charge (nC)
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10
1
Normalized Thermal Response (Rthjc)
Duty factor=0.5
100us
1
0.2
ID (A)
0.1
1ms
0.1
0.1
0.05
T C =25 C Single Pulse
0.01 10 100 1000
o
10ms 100ms DC
PDM
t
0.02 0.01
T
Duty factor = t/T Peak Tj = PDM x Rthjc + T c
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS 90%
VG QG 10V QGS QGD
10% VGS td(on) tr td(off) tf Charge Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
D
A
Millimeters c1
SYMBOLS MIN NOM MAX Original
D1 A E2 A1 B1 E1 E B2
Original Original
2.10 0.60 0.40 0.60 0.40 0.40 6.00 4.80 5.00 1.20 ---7.00
2.30 1.20 0.60 0.95 0.50 0.55 6.50 5.40 5.50 1.70 2.30 ---
2.50 1.80 0.80 1.25 0.65 0.70 7.00 5.90 6.00 2.20 ---16.70
c c1
D
A1
B2 B1 F
D1 E1 E2
e
.