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AP02N70EJ Dataheets PDF



Part Number AP02N70EJ
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP02N70EJ DatasheetAP02N70EJ Datasheet (PDF)

AP02N70EJ RoHS-compliant Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ ESD Improved Capability ▼ Simple Drive Requirement G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 700V 7Ω 1.6A S Description AP02N70 from APEC provide the designer with the best combination of fast switching , low on-resistance and cost-effectiveness. The TO-251 package is widely preferred for commercial-industrial through hole applications and suited for AC/DC converters. G D S TO-.

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AP02N70EJ RoHS-compliant Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ ESD Improved Capability ▼ Simple Drive Requirement G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 700V 7Ω 1.6A S Description AP02N70 from APEC provide the designer with the best combination of fast switching , low on-resistance and cost-effectiveness. The TO-251 package is widely preferred for commercial-industrial through hole applications and suited for AC/DC converters. G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 700 ±20 1.6 1 6.4 45 2 Units V V A A A W mJ A ℃ ℃ Total Power Dissipation Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 13 1.6 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 2.8 110 Units ℃/W ℃/W Data & specifications subject to change without notice 1 200712241 AP02N70EJ Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Drain-Source Leakage Current (Tj=150 C) o o Test Conditions VGS=0V, ID=1mA 3 Min. 700 2 - Typ. 0.65 17 1.5 11 10 8 21 15 170 30 20 Max. Units 7 4 10 100 ±10 30 300 V Ω V S uA uA uA nC nC nC ns ns ns ns pF pF pF VGS=10V, ID=0.8A VDS=VGS, ID=250uA VDS=10V, ID=0.8A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS=±20V ID=0.8A VDS=560V VGS=10V VDD=350V ID=0.8A RG=4.7Ω,VGS=10V RD=438Ω VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 3 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 3 3 Test Conditions IS=1.6A, VGS=0V IS=1.6A, VGS=0V, dI/dt=100A/µs Min. - Typ. 340 2550 Max. Units 1.5 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Starting Tj=25 C , VDD=50V , L=10mH , RG=25Ω , IAS=1.6A. 3.Pulse test o THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT DEVICE OR SYSTEM ARE NOT AUTHORIZED. 2 AP02N70EJ 2 2 T C =25 C 2 o ID , Drain Current (A) ID , Drain Current (A) 10V 9.0V 8.0V 7.0V T C =150 C 2 o 10V 9.0V 8.0V 7.0V V G =6.0V 2 1 V G =6.0V 1 1 1 0 0 0 0 0.0 4.0 8.0 12.0 16.0 20.0 24.0 28.0 0.0 4.0 8.0 12.0 16.0 20.0 24.0 28.0 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.4 2.0 I D =0.8A V G =10V Normalized BVDSS (V) 1.2 1.6 Normalized RDS(ON) 1 1.2 0.8 0.8 0.6 -50 0 50 100 150 0.4 -50 0 50 100 150 Tj , Junction Temperature ( ℃ ) T j , Junction Temperature ( ℃ ) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.2 5 T j =150 o C 4 T j =25 C 1.1 o 3 Normalized VGS(th) (V) 0.2 0.4 0.6 0.8 1 1.2 1.0 IS(A) 2 0.9 1 0.8 0 0.7 -50 -25 0 25 50 75 100 125 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( ℃ ) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP02N70EJ f=1.0MHz 12 1000 I D =0.8A 10 VGS , Gate to Source Voltage (V) 8 C (pF) V DS =560V 6 C iss 100 4 C oss 2 C rss 10 0 4 8 12 16 20 24 1 5 9 13 17 21 25 29 0 Q G , Total Gate Charge (nC) V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 10 1 Normalized Thermal Response (Rthjc) Duty factor=0.5 100us 1 0.2 ID (A) 0.1 1ms 0.1 0.1 0.05 T C =25 C Single Pulse 0.01 10 100 1000 o 10ms 100ms DC PDM t 0.02 0.01 T Duty factor = t/T Peak Tj = PDM x Rthjc + T c Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4 ADVANCED POWER ELECTRONICS CORP. D A Millimeters c1 SYMBOLS MIN NOM MAX Original D1 A E2 A1 B1 E1 E B2 Original Original 2.10 0.60 0.40 0.60 0.40 0.40 6.00 4.80 5.00 1.20 ---7.00 2.30 1.20 0.60 0.95 0.50 0.55 6.50 5.40 5.50 1.70 2.30 --- 2.50 1.80 0.80 1.25 0.65 0.70 7.00 5.90 6.00 2.20 ---16.70 c c1 D A1 B2 B1 F D1 E1 E2 e .


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