N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP02N60H/J-H-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Re...
Description
Advanced Power Electronics Corp.
AP02N60H/J-H-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Speed RoHS-compliant, halogen-free G S D
BV DSS R DS(ON) ID
700V 8.8Ω 1.4A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
G D S
D (tab)
TO-252 (H)
The AP02N60H-H-HF-3 is in the TO-252 package which is widely preferred for commercial and industrial surface mount applications such as medium-power AC/DC converters. The through-hole TO-251 version (AP02N60J-H-HF-3) is available where a small PCB footprint or attached heatsink is required.
G D S
D (tab)
TO-251 (J)
Absolute Maximum Ratings
Symbol VDS VGS ID at TC =25°C ID at TC=100°C IDM PD at TC=25°C EAS IAR EA R TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 700 ± 30 1.4 0.9 5.6 39 0.31
2
Units V V A A A W W/ °C mJ A mJ °C °C
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range
49 1.4 0.5 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-a Rthj-a Rthj-c Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB Maximum Thermal Resistance, Junction-ambient
mount)4
Value 3.2 62.5 110
Unit °C...
Similar Datasheet