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AP01L60J-A-HF Dataheets PDF



Part Number AP01L60J-A-HF
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP01L60J-A-HF DatasheetAP01L60J-A-HF Datasheet (PDF)

AP01L60H/J-A-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ 100% Avalanche Rated ▼ Fast Switching Speed ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 650V 12Ω 1A Description The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for AC/DC converters. The through-hole version (AP01L60J) is available for low-profile applications. G D S TO-252(H) G D S TO-2.

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AP01L60H/J-A-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ 100% Avalanche Rated ▼ Fast Switching Speed ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 650V 12Ω 1A Description The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for AC/DC converters. The through-hole version (AP01L60J) is available for low-profile applications. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 650 +30 1 0.8 3 29 0.232 2 Units V V A A A W W/ ℃ mJ A mJ ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 0.5 1 0.5 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 4 Value 4.3 62.5 110 Units ℃/W ℃/W ℃/W 1 201106171 Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice AP01L60H/J-A-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA 3 o Min. 650 2 - Typ. 0.8 0.8 4.0 1.0 1.1 6.6 5.0 11.7 9.2 170 30.7 5.1 Max. Units 12 4 10 100 +100 V V/℃ Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 3 VGS=10V, ID=0.5A VDS=VGS, ID=250uA VDS=10V, ID=0.5A VDS=600V, VGS=0V VGS=±30V ID=1A VDS=480V VGS=10V VDD=300V ID=1A RG=3.3Ω,VGS=10V RD=300Ω VGS=0V VDS=25V f=1.0MHz Drain-Source Leakage Current (Tj=125oC) VDS=480V, VGS=0V Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 3 Source-Drain Diode Symbol IS ISM VSD Parameter Pulsed Source Current ( Body Diode ) 1 Test Conditions Min. - Typ. - Max. Units 1 5 1.2 A A V Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.2V Forward On Voltage 3 Tj=25℃, IS=1A, VGS=0V Notes: 1.Pulse width limited by Max. junction temperature. 2.Starting Tj=25oC , VDD=50V , L=1.0mH , RG=25Ω , IAS=1.0A. 3.Pulse test 4.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC.


AP01L60H-A-HF AP01L60J-A-HF AP01L60H-HF


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