N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP02N40H/J-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Fast Switching Characterist...
Description
AP02N40H/J-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
400V 5Ω 1.6A
S
Description
AP02N40 uses rugged design with the best combination of fast switching and cost-effectiveness. The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for AC/DC converters. The through-hole version (AP02N40J) is available for low-profile applications.
G
D
S
TO-252(H)
G D S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current
1
Rating 400 +30 1.6 1 3 33
2
Units V V A A A W mJ A ℃ ℃
Total Power Dissipation Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range
5 1 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
4
Value 3.8 62.5 110
Unit ℃/W ℃/W ℃/W 1 201003172
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
AP02N40H/J-HF
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGS...
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