HAT2053M
Silicon N Channel Power MOS FET Power Switching
ADE-208-755B(Z) Preliminary 3rd. Edition December 1998 Features
Low on-resistance Low drive current High density mounting 2.5V gate drive device can be driven from 3V source
Outline
TSOP–6
4 5 6 3 2 1
1 2 5 6 D D D D
3 G
4 Source 3 Gate 1, 2, 5, 6 Drain
S 4
HAT2053M
Absolute Maximum Ratin...
