HAT2036R

HAT2036R Silicon N Channel Power MOS FET Power Switching ADE-208-665B(Z) Target specification 3rd. Edition May 1998 Features Low on-resistance R DS(on) =12mΩ typ Capable of 4.5 V gate drive Low drive current High density mounting High speed switching tf=60ns typ. Outline SOP–8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT2036R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse) * I DR Pch* Tch Tstg 2 1 Ratings 30 ±20 12 96 12 2.5 150 –55 to +150 Unit V V A A A W °C °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s Electrical Characteristics (Ta = 25°C) Item Symbol Min 30 — — 1.5 — — 12 — — — — — — — — — — — — Typ — — — — 12 20 20 1200 380 200 23 4.0 6.0 40 300 35 60 0.9 35 Max — ±0.1 1 3.0 15 30 — — — — — — — — — — — — — Unit V µA µA V mΩ mΩ S pF pF pF nc nc nc ns ns ns ns V ns IF = 12A, VGS = 0 *1 IF = 12A, VGS = 0 diF/ dt =20A/µs Test Conditions I D = 10mA, VGS = 0 VGS = ±20V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10V, I D = 1mA I D = 6A, VGS = 10V *1 I D = 6A, VGS = 4.5V *1 I D = 6A, VDS = 10V *1 VDS = 10V VGS = 0 f = 1MHz VDD = 10V VGS = 10V I D = 12A VGS = 4.5V, ID = 6A VDD ≈ 10V Drain to source breakdown voltage V(BR)DSS Gate to source leak current Zero...