HAT2031T

HAT2031T Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-529F (Z) 7th. Edition February 1999 Features Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline TSSOP–8 65 34 87 1 D 8 D 12 4 G 5 G S S 2 3 S S 6 7 MOS1 MOS2 1, 8 Drain 2, 3, 6, 7 Source 4, 5 Gate HAT2031T Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Pch Tch Tstg Note2 NoteÇR Note1 Ratings 20 ± 12 3.5 28 3.5 1 1.5 150 – 55 to + 150 Unit V V A A A W W °C °C 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. 1 Drive Operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s 3. 2 Drive Operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s Electrical Characteristics (Ta = 25°C) Item Symbol Min 20 ± 12 — — 0.5 — — 4.5 — — — — — — — — — Typ — — — — — 0.054 0.074 7 300 185 90 13 75 60 75 0.85 35 Max — — ± 10 1 1.5 0.070 0.098 — — — — — — — — 1.11 — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns IF = 3.5 A, VGS = 0 Note4 IF = 3.5 A, VGS = 0 diF/ dt = 20 A/µs Test Conditions I D = 10 mA, VGS = 0 I G = ± 100 µA, VDS = 0 VGS = ± 10 V, VDS = 0 VDS = 12 V, VGS = 0 VDS = 10 V, I D = 1m A I D = 2 A, VGS = 4 V Note4 I D = 2 A, VGS = 2.5 V Note4 I D = 2 A, VDS = 10 V Note4 VDS = 10 V VG...