HAT2024R

HAT2024R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-494 C (Z) 4th. Edition July 1997 Features Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 34 1 2 7 8 D D 5 6 D D 2 G 4 G S1 S 3 1, 3 2, 4 5, 6, 7, 8 S G Dra MOS1 MOS2 HAT2024R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* I DR Pch*2 Pch * Tch Tstg 3 1 Ratings 30 ±20 5.5 44 5.5 2 3 150 –55 to +150 Unit V V A A A W W °C °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s 3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s 2 HAT2024R Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS V(BR)GSS I GSS I DSS Min 30 ±20 — — 1.0 — — 3.5 — — — — — — — — — Typ — — — — — 0.05 0.078 5.5 310 220 100 17 190 25 60 0.9 50 Max — — ±10 10 2.0 0.065 0.11 — — — — — — — — 1.4 — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns IF = 5.5A, VGS = 0*1 IF = 5.5A, VGS = 0 diF/ dt =20A/µs Test Conditions I D = 10mA, VGS = 0 I G = ±100µA, VDS = 0 VGS = ±16V, VDS = 0 VDS = 30 V, ...