HAT1033T

HAT1033T Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-532H (Z) 9th. Edition February 1999 Features Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline TSSOP–8 65 34 87 12 1 5 8 D D D 4 G S S S S 2 3 6 7 1, 5, 8 Drain 2, 3, 6, 7 Source 4 Gate HAT1033T Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings – 20 ± 10 – 3.5 – 28 – 3.5 Unit V V A A A W °C °C Body–drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Note: Pch Tch Tstg Note2 1.3 150 – 55 to + 150 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s Electrical Characteristics (Ta = 25°C) Item Drain to source breakdow voltage Symbol Min V(BR)DSS – 20 ± 10 — — – 0.4 — — 5 — — — — — — — — — Typ — — — — — 0.046 0.061 8.0 970 510 150 16 100 245 75 Max — — ± 10 –1 – 1.4 0.063 0.090 — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns IF = – 3.5 A, VGS = 0 Note3 IF = – 3. 5A, VGS = 0 diF/ dt = 20 A/µs Test Conditions I D = – 10 mA, VGS = 0 I G = ± 100 µA, VDS = 0 VGS = ± 8 V, VDS = 0 VDS = – 20 V, VGS = 0 VDS = – 10 V, I D = – 1 mA I D = – 2 A, VGS = – 4 V Note3 I D = – 2 A, VGS = – 2.5 V Note3 I D = – 2 A, VDS = – 10 V Note3 VDS = – 10 V VGS = 0 f = 1MHz VGS = – 4 V, ID = – 2 A VDD ≅ – 10 V Gate to source breakdown voltage V(BR)...