Silicon P-Channel Power MOSFET
HAT1016R
Silicon P Channel Power MOS FET High Speed Power Switching
ADE-208-471 D (Z) 5th. Edition February 1999 Featur...
Description
HAT1016R
Silicon P Channel Power MOS FET High Speed Power Switching
ADE-208-471 D (Z) 5th. Edition February 1999 Features
Low on-resistance Capable of 4 V gate drive Low drive current High density mounting
Outline
SOP–8
8 5 7 6
3 1 2 7 8 D D 5 6 D D
4
2 G
4 G
S1
S3
1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain
MOS1
MOS2
HAT1016R
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse)
Note1
Ratings – 30 ± 20 – 4.5 – 36 – 4.5
Unit V V A A A W W °C °C
Body–drain diode reverse drain current I DR Channel dissipation Channel dissipation Channel temperature Storage temperature Note: Pch Pch Tch Tstg
Note2 Note3
2 3 150 – 55 to + 150
1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s 3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
Electrical Characteristics (Ta = 25°C)
Item Symbol Min –30 ±20 — — –1.0 — — 4 — — — — — — — — — Typ — — — — — 0.07 0.11 6 660 440 140 24 165 35 70 –0.9 60 Max — — ±10 –10 –2.5 0.09 0.18 — — — — — — — — –1.4 — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns IF = – 4.5 A, VGS = 0 Note4 IF = – 4.5 A, VGS = 0 diF/ dt = 20 A/µs Test Conditions I D = –10 mA, VGS = 0 I G = ± 100 µA, VDS = 0 VGS = ± 16 V, VDS = 0 VDS = – 30 V, VGS = 0 VDS = – 10 V, I D = – 1 mA I D = – 3 A, VGS = – 10 V Note4 I D = – 3 A, VGS = – 4 V Note4 I D = – 3 A, VDS = –...
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