D689

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain: hFE = 1000(Min)@ IC= 1A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 100V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = 1.5V(Max)@ IC= 1A ·Complement to Type 2SB679 2SD689 APPLICATIONS ·Low frequency medium power amplifier and medium speed switching applications. ·Pulse motor driver, relay drive and hammer drive applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC PC Tj Tstg Collector-Base Voltage 100 V Collector-Emitter Voltage 100 V Emitter-Base Voltage 10 V Collector Current-Continuous Collector Power Dissipation TC=25℃ Junction Temperature 1.5 A 10 W 150 ℃ Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= 10mA; IB= 0 IE= 5mA; IC= 0 IC= 1A ,IB= 2mA IC= 1A ,IB= 2mA VCB= 100V, IE= 0 VEB= 10V; IC= 0 IC= 0.1A ; VCE= 2V IC= 1A ; VCE= 2V 2000 1000 MIN 100 10 TYP. 2SD689 MAX UNIT V V 1.5 2.5 10 1...