N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP02N90H/J-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fa...
Description
AP02N90H/J-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristics ▼ RoHS Compliant & Halogen-Free G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
900V 7.2Ω 1.9A
Description
S
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The through-hole version (AP02N90J) is available for low-profile applications.
G D
S
TO-252(H)
G D S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current
1
Rating 900 +30 1.9 1.2 6 62.5 0.5
Units V V A A A W W/ ℃ W mJ A ℃ ℃
Total Power Dissipation Linear Derating Factor Total Power Dissipation Avalanche Current Storage Temperature Range Operating Junction Temperature Range
4 2
2 18 1.9 -55 to 150 -55 to 150
Single Pulse Avalanche Energy
Thermal Data
Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
4
Value 2 62.5 110
Units ℃/W ℃/W ℃/W 1 201008115
Maximum Thermal Resistance, Junction-ambient
Data & specifi...
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