Document
AP03N70H/J-H
Pb Free Plating Product
Advanced Power Electronics Corp.
¡¿ ¡¿ ¡¿ ¡¿ Repetitive Avalanche Rated Fast Switching Speed Simple Drive Requirement RoHS Compliant G S
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
700V 4.4£[ 2.5A
Description
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for AC/DC converters. The through-hole version (AP03N70J) is available for lowprofile applications.
G D S
TO-252(H)
G
DS
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25¢J ID@TC=100¢J IDM PD@TC=25¢J EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating 700 ±30 2.5 1.6 8 54.3 0.44
2
Units V V A A A W W/¢J mJ A ¢J ¢J
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range
31 2.5 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.3 110 Units ¢J /W ¢J /W
Data & specifications subject to change without notice
200417062-1/4
AP03N70H/J-H
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
£GB VDSS/£G Tj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=1mA
Min. 700 2 -
Typ. 0.6 2 12 3 4 8.5 6 19 8 590 50 6 3.4
Max. Units 4.4 4 10 100 ±100 20 950 5.1 V V/¢J £[ V S uA uA nA nC nC nC ns ns ns ns pF pF pF £[
Breakdown Voltage Temperature Coefficient Reference to 25¢J , ID=1mA
RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C)
o o
VGS=10V, ID=1.6A VDS=VGS, ID=250uA VDS=10V, ID=1.6A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS=±30V ID=1A VDS=480V VGS=10V VDD=300V ID=2.5A RG=10£[, VGS=10V RD=120£[ VGS=0V VDS=25V f=1.0MHz f=1.0MHz
Gate-Source Leakage Total Gate Charge
3
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
3
Source-Drain Diode
Symbol VSD trr Qrr Notes: 1.Pulse width limited by safe operating area. 2.Starting Tj=25oC , VDD=50V , L=10mH , RG=25£[ 3.Pulse width <300us , duty cycle <2%. , IAS=2.5A. Parameter Forward On Voltage
3 2
Test Conditions IS=2.5A, VGS=0V IS=2.5A, VGS=0V, dI/dt=100A/µs
Min. -
Typ. 407 2110
Max. Units 1.5 V ns nC
Reverse Recovery Time
Reverse Recovery Charge
2/4
AP03N70H/J-H
4 3
T C =25 C
3
o
10V 6.0V
2
T C =150 C
o
10V 5.0V
ID , Drain Current (A)
ID , Drain Current (A)
2
4.5V
2
5.0V
1
1
4.0V
1
4.5V V G =4.0V
0 0 5 10 15 20 25
V G =3.5V
0 0 5 10 15 20 25
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
3.0
1.1
I D =2.5A V G =10V Normalized RDS(ON)
-50 0 50 100 150
2.0
Normalized BVDSS (V)
1.0
1.0
0.9
0.8
0.0 -50 0 50 100 150
T j , Junction Temperature ( o C)
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction Temperature
100 5
Fig 4. Normalized On-Resistance v.s. Junction Temperature
10
4
T j = 150 o C IS (A)
1
T j = 25 o C
VGS(th) (V)
3
0.1
2
0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.3
1 -50 0 50 100 150
V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( o C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
3/4
AP03N70H/J-H
f=1.0MHz
16 10000
VGS , Gate to Source Voltage (V)
I D =1A V DS =480V
12
C iss C (pF)
8
100
C oss
4
C rss
0 0 5 10 15 1
1 5 9 13 17 21 25 29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10
1
100us
1
Normalized Thermal Response (Rthjc)
DUTY=0.5
0.2
0.1 0.05
ID (A)
1ms 10ms 100ms DC
o T c =25 C Single Pulse
0.01 1 10 100 1000 10000
0.1
0.02 0.01
PDM
0.1
t T
Single Pulse
Duty factor = t/T Peak Tj = PDM x Rthjc + T C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS 90%
VG QG 10V QGS QGD
10% VGS td(on) tr td(off) tf
Charge Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
.