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AP03N70H-H-HF-3 Dataheets PDF



Part Number AP03N70H-H-HF-3
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP03N70H-H-HF-3 DatasheetAP03N70H-H-HF-3 Datasheet (PDF)

Advanced Power Electronics Corp. AP03N70H/J-H-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Speed RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 700V 4.4Ω 2.5A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. G D S D (tab) TO-252 (H) The AP03N70H-H-HF-3 is in the TO-252 package which is widely preferred for commer.

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Advanced Power Electronics Corp. AP03N70H/J-H-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Speed RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 700V 4.4Ω 2.5A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. G D S D (tab) TO-252 (H) The AP03N70H-H-HF-3 is in the TO-252 package which is widely preferred for commercial and industrial surface mount applications such as medium-power AC/DC converters. The through-hole TO-251 version (AP03N70J-H-HF-3) is available where a small PCB footprint or attached heatsink is required. G D S D (tab) TO-251 (J) Absolute Maximum Ratings Symbol VDS VGS ID at TC =25°C ID at TC=100°C IDM PD at TC=25°C EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 700 + 30 2.5 1.6 8 54 0.44 2 Units V V A A A W W/ °C mJ A °C °C Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 31 2.5 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-a Rthj-c Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 2.3 110 Unit °C/W °C/W Ordering Information AP03N70H-H-HF-3TR AP03N70J-H-HF-3TB : : in RoHS-compliant halogen-free TO-252 shipped on tape and reel (3000 pcs/reel) in RoHS-compliant halogen-free TO-251 shipped in tubes (80pcs/tube) ©2011 Advanced Power Electronics Corp. USA www.a-powerusa.com 200604172-3 1/6 Advanced Power Electronics Corp. AP03N70H/J-HF-3 Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS ∆BVDSS/∆Tj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA Min. 700 2 Typ. 0.6 2 12 3 4 8.5 6 19 8 590 50 6 3.4 950 5.1 Max. Units 4.4 4 10 100 ±100 20 V V/°C Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25 °C, ID=1mA Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VGS=10V, ID=1.6A VDS=VGS, ID=250uA VDS=10V, ID=1.6A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS=±30V ID=1A VDS=480V VGS=10V VDD=300V ID=2.5A RG=10Ω , VGS=10V RD=120Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 3 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 3 2 Test Conditions IS=2.5A, VGS=0V IS=2.5A, VGS=0V dI/dt=100A/µs Min. - Typ. 407 2110 Max. Units 1.5 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area o 2.Starting Tj=25 C , VDD=50V , L=10mH , RG=25Ω , IAS=2.5A. 3.Pulse width <300us , duty cycle <2%. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. ©2011 Advanced Power Electronics Corp. USA www.a-powerusa.com 2/6 Advanced Power Electronics Corp. Typical Electrical Characteristics 4 3 AP03N70H/J-HF-3 T C =25 C 3 o 10V 6.0V 2 T C =150 C o 10V 5.0V ID , Drain Current (A) ID , Drain Current (A) 2 4.5V 2 5.0V 1 1 4.0V 1 4.5V V G =4.0V 0 0 5 10 15 20 25 V G =3.5V 0 0 5 10 15 20 25 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.2 3.0 1.1 I D =2.5A V G =10V Normalized RDS(ON) -50 0 50 100 150 2.0 Normalized BVDSS (V) 1.0 1.0 0.9 0.8 0.0 -50 0 50 100 150 T j , Junction Temperature ( o C) T j , Junction Temperature ( o C) Fig 3. Normalized BVDSS vs. Junction Temperature 5 Fig 4. Normalized On-Resistance vs. Junction Temperature 100 10 4 T j = 150 o C IS (A) 1 T j = 25 o C VGS(th) (V) 3 0.1 2 0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage vs. Junction Temperature ©2011 Advanced Power Electronics Corp. USA www.a-powerusa.com 3/6 Advanced Power Electronics Corp. Typical Electrical Characteristics (cont.) AP03N70H/J-HF-3 f=1.0MHz 16 10000 .


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