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AP03N70I-H

Advanced Power Electronics

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP03N70I-H Pb Free Plating Product Advanced Power Electronics Corp. ¡¿ ¡¿ ¡¿ ¡¿ Repetitive Avalanche Rated Fast Switchi...


Advanced Power Electronics

AP03N70I-H

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AP03N70I-H Pb Free Plating Product Advanced Power Electronics Corp. ¡¿ ¡¿ ¡¿ ¡¿ Repetitive Avalanche Rated Fast Switching Speed Simple Drive Requirement RoHS Compliant N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 700V 4.4£[ 2.5A G S Description AP03N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. TO-220CFM type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast G D switching,ruggedized design and cost-effectiveness. S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25¢J ID@TC=100¢J IDM PD@TC=25¢J EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 700 ±30 2.5 1.6 8 29 0.23 2 Units V V A A A W W/¢J mJ A ¢J ¢J Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 32 2.5 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4.3 65 Units ¢J /W ¢J /W Data & specifications subject to change without notice 200417062-1/4 AP03N70I-H Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS £GB VDSS/£G Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=...




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