N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP03N70I-H
Pb Free Plating Product
Advanced Power Electronics Corp.
¡¿ ¡¿ ¡¿ ¡¿ Repetitive Avalanche Rated Fast Switchi...
Description
AP03N70I-H
Pb Free Plating Product
Advanced Power Electronics Corp.
¡¿ ¡¿ ¡¿ ¡¿ Repetitive Avalanche Rated Fast Switching Speed Simple Drive Requirement RoHS Compliant
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
D
BVDSS RDS(ON) ID
700V 4.4£[ 2.5A
G S
Description
AP03N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. TO-220CFM type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast G D switching,ruggedized design and cost-effectiveness. S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25¢J ID@TC=100¢J IDM PD@TC=25¢J EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating 700 ±30 2.5 1.6 8 29 0.23
2
Units V V A A A W W/¢J mJ A ¢J ¢J
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range
32 2.5 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4.3 65 Units ¢J /W ¢J /W
Data & specifications subject to change without notice
200417062-1/4
AP03N70I-H
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
£GB VDSS/£G Tj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=...
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