AP02N60J-H

AP02N60H/J-H RoHS-compliant Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 700V 8.8Ω 1.4A Description G D The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for AC/DC converters. The through-hole version (AP02N60J-H) is available for low-profile applications. G D S S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 700 +30 1.4 0.9 5.6 39 0.31 2 Units V V A A A W W/ ℃ mJ A mJ ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 49 1.4 0.5 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 4 Value 3.2 62.5 110 Units ℃/W ℃/W ℃/W Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice 1 200807222 AP02N60H/J-H Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Volta...