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HAF2011S

Hitachi Semiconductor

Silicon N Channel MOS FET Series Power Switching


Description
HAF2011(L),HAF2011(S) Silicon N Channel MOS FET Series Power Switching Target specification ADE-208-738 (Z) 1st. Edition Jan. 1999 Features This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate...



Hitachi Semiconductor

HAF2011S

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