N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP01N40G-HF-3
N-channel Enhancement-mode Power MOSFET
Fast Switching Characteristics ...
Description
Advanced Power Electronics Corp.
AP01N40G-HF-3
N-channel Enhancement-mode Power MOSFET
Fast Switching Characteristics Low Gate Charge Simple Drive Requirement 100% Avalanche-tested
D
BV DSS RDS(ON)
G S
ID
400V 16Ω
200mA
RoHS-compliant, halogen-free SOT-89 package
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP01N40G-HF-3 is in the popular SOT-89 small package which is widely used in commercial and industrial applications where a small board footprint is required. This device is well suited for use in low current applications such as small switching power supplies and load switches. D
S D G
SOT-89 (G)
Absolute Maximum Ratings
Symbol VDS VGS ID at TA=25°C ID at TA=70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1
Rating 400 ±20 0.2 0.14 0.8 1.25 -55 to 150 -55 to 150
Units V V A A A W °C °C
Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a
Parameter Maximum Thermal Resistance, Junction-ambient
3
Value 100
Units °C/W
Ordering Information
AP01N40G-HF-3TR : in RoHS-compliant halogen-free SOT-89, shipped on tape and reel, 1000pcs/ reel
©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com
201005191-3
1/5
Advanced Power Electronics Corp.
Electrical Specifications at Tj=25°C (u...
Similar Datasheet