N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP01N40G-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Lower Gate Charge ▼ 100% Avalanche Test ▼ Fast Swit...
Description
AP01N40G-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Lower Gate Charge ▼ 100% Avalanche Test ▼ Fast Switching Performance ▼ Simple Drive Requirement
G S D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
D
400V 16Ω 0.2A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. S
SOT-89
D G
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current
1 3 3
Rating 400 +20 0.2 0.14 0.8 1.25 -55 to 150 -55 to 150
Units V V A A A W ℃ ℃
Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient
3
Value 100
Units ℃/W 1 201005191
Data & specifications subject to change without notice
AP01N40G-HF
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge
2 2
o
Test Conditions VGS=0V, ID=250uA VGS=10V, ID=0.2A VDS=VGS, ID=250uA VDS=10V, ID=0.2A VDS=400V, VGS=0V VGS=+20V, VDS=0...
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