Ordering number:EN2803
NPN Epitaxial Planar Silicon Transistor
2SD2028
Low-Frequency Power Amplifier Applications
Feat...
Ordering number:EN2803
NPN Epitaxial Planar Silicon
Transistor
2SD2028
Low-Frequency Power Amplifier Applications
Features
· With Zener diode (11±3V) between collector and base. · Large current capacity. · Low collector-to-emitter saturation voltage. · Ultrasmall-sized package permitting the 2SD2028applied sets to be made small and slim.
Package Dimensions
unit:mm 2018B
[2SD2028]
0.5
0.4 3 0.16
0 to 0.1
0.5
1
0.95 0.95 2 1.9 2.9
1.5
2.5
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions With Zener diode (11±3V) With Zener diode (11±3V)
1 : Base 2 : Emitter 3 : Collector SANYO : CP
0.8 1.1
Ratings 8 8 5 0.7 1.5 200 150 –55 to +150
Unit V V V A A mW
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE1 hFE2 fT Cob VCB=6V, IE=0 VEB=4V, IC=0 VCE=2V, IC=50mA VCE=2V, IC=500mA VCE=2V, IC=50mA VCB=5V, f=1MHz 200* 100 200 12 MHz pF Conditions Ratings min typ max 100 100 900* Unit nA nA
* : The 2SD2028 is classified by 50mA hFE as follows : 200 (Note) Marking : LT hFE rank : 6, 7, 8
6
400
300
7
600
450
8
900
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