D2256

2SD2256 Silicon NPN Triple Diffused ADE-208-928 (Z) 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary pair with 2SB1494 Features High breakdown voltage and high current (VCEO = 120 V, I C = 25 A) Built-in C-E diode Outline TO-3P 2 1 1. Base 2. Collector (Flange) 3. Emitter ID 1 2 3 3 2SD2256 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg ID* 1 1 Ratings 120 120 7 25 35 120 150 –55 to +150 25 Unit V V V A A W °C °C A Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 120 120 120 7 — — 2000 500 — — — — — — — — Typ — — — — — — — Max — — — — 10 10 20000 — 2.0 3.5 3.0 4.5 V V V V Unit V V V V µA µA Test conditions I C = 0.1 mA, IE = 0 I C = 25 mA, RBE = ∞ I C = 200 mA, RBE = ∞ I E = 50 mA, IC = 0 VCB = 100 V, IE = 0 VCE = 100 V, RBE = ∞ VCE = 4 V, IC = 12 A*1 VCE = 4 V, IC = 25 A*1 I C = 12 A, IB = 24 mA*1 I C = 25 A, IB = 250 mA*1 I C = 12 A, IB = 24 mA*1 I C = 25 A, IB = 250 mA*1 Collector to emitter breakdown V(BR)CEO voltage Collector to emitter sustain voltage Emitter to base breakdown voltage Collector cutoff current VCEO(sus) V(BR)EBO I CBO I CEO DC current transfer ratio hFE1 hFE2 Collector to ...