Document
TK35N65W5
MOSFETs Silicon N-Channel MOS (DTMOS)
TK35N65W5
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) (4) Fast reverse recovery time: trr = 130 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.08 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 2.1 mA)
3. Packaging and Internal Circuit
1: Gate 2: Drain (Heatsink) 3: Source
TO-247
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC) Reverse drain current (pulsed) Channel temperature Storage temperature Mounting torque (Note 1) (Note 1) (Tc = 25) (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR IDR IDRP Tch Tstg TOR Rating 650 ±30 35 140 270 614 8.8 35 140 150 -55 to 150 0.8 Nm W mJ A A Unit V
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Start of commercial production
1
2013-09 2014-02-25 Rev.2.0
TK35N65W5
5. Thermal Characteristics
Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Symbol Rth(ch-c) Rth(ch-a) Max 0.463 50 Unit /W
Note 1: Ensure that the channel temperature does not exceed 150. Note 2: VDD = 90 V, Tch = 25 (initial), L = 14 mH, RG = 25 Ω, IAR = 8.8 A
Note:
This transistor is sensitive to electrostatic discharge and should be handled with care.
2
2014-02-25 Rev.2.0
TK35N65W5
6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25 unless otherwise specified)
Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance Symbol IGSS IDSS V(BR)DSS Vth RDS(ON) Test Condition VGS = ±30 V, VDS = 0 V VDS = 650 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 2.1 mA VGS = 10 V, ID = 17.5 A Min 650 3 Typ. 0.08 Max ±1 100 4.5 0.095 Ω V Unit µA
6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified)
Characteristics Input capacitance Reverse transfer capacitance Output capacitance Effective output capacitance Gate resistance Switching time (rise time) Switching time (turn-on time) Switching time (fall time) Switching time (turn-off time) MOSFET dv/dt ruggedness Symbol Ciss Crss Coss Co(er) rg tr ton tf toff dv/dt VDD = 0 to 400 V, ID.