TK3904NND03

FM120-M THRU TK3904NND03 WBFBP-03B Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Batch process design, excellent power dissipation offers WILLAS Pb Free Produ Features Package outline WBFBP-03B (1.2×1.2×0.5) unit: mm C Method 2026 RoHS product for packing code suffix ”G” Polarity : Indicated by cathode band Halogen free product for packing code suffix “H” Mounting Position : Any Weight : Approximated 0.011 gram Symbol im SYMBOL FM120-M MAXIMUM RATINGS AND ELECTRICAL MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Single phase half wave, 60Hz, resistive of inductive load. Collector-Base Voltage VCBO For capacitive load, derate current by 20%   ina ry C B E Value 60 14 40 28 40 15 50 35 50 VRRM VRMS VDC IO   IFSM 12 20 14 13 30 21 30 60 0.2 42 0.15 60 TRANSISTOR better reverse leakage current and thermal resistance. Low profile surface mounted application in order to DESCRIPTION optimize board space. power loss, high efficiency. Low NPN Epitaxial Silicon Transistor High current capability, low forward voltage drop. FEATURES High surge capability. for overvoltage protection. Guardring Epitaxial Planar Die Construction Ultra high-speed switching. Complementary PNP Type Available (TK3906NND03) Silicon epitaxial planar chip, metal silicon junction. Ultra-Small Surface Mount Package Lead-free...