SSM6N7002AFU

SSM6N7002AFU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N7002AFU High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low ON resistance : Ron = 3.3 Ω (max) (@VGS = 4.5 V) : Ron = 3.2 Ω (max) (@VGS = 5 V) : Ron = 3.0 Ω (max) (@VGS = 10 V) 2.1±0.1 Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) 0.65 0.65 2.0±0.2 1.3±0.1 1.25±0.1 Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD (Note) Tch Tstg Rating 60 ± 20 200 800 300 150 −55~150 Unit V V 1 2 3 6 5 4 Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range mW °C °C 0.9±0.1 mA Note: Total rating, mounted on FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32mm × 6) 0.4 mm 0.8 mm JEDEC 1.SOURCE1 JEITA 2.GATE1 3.DRAIN2 TOSHIBA ― 4.SOURCE2 ― 5.GATE2 6.DRAIN1 2-2J1C US6 0.012 g (typ.) Weight: Marking 6 5 4 Equivalent Circuit (top view) 6 5 4 NK 1 2 3 1 Q1 Q2 2 3 Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 Downloaded from Elcodis.com electronic components distributor 0~0.1 2007-05-28 0.15±0.05 +0.1 0.2-0.05 SSM6N7002AFU Electrical Characteristics (Ta = 25°C) Characterist...