SSM6N35FU
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6N35FU
○ High-Speed Switching Applications ○ An...
SSM6N35FU
TOSHIBA Field-Effect
Transistor Silicon N-Channel MOS Type
SSM6N35FU
○ High-Speed Switching Applications ○ Analog Switch Applications
Unit: mm
1.2-V drive N-ch 2-in-1 Low ON-resistance:
RDS(ON) = 20 Ω (max) (@VGS = 1.2 V) RDS(ON) = 8 Ω (max) (@VGS = 1.5 V) RDS(ON) = 4 Ω (max) (@VGS = 2.5 V) RDS(ON) = 3 Ω (max) (@VGS = 4.0 V)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain–source voltage
VDS
20
V
Gate–source voltage
VGSS
± 10
V
Drain current
DC
ID
Pulse
IDP
180 mA
360
1.Source 1 4.Source 2 2.Gate 1 5.Gate 2 3.Drain 2 6.Drain 1
Power dissipation Channel temperature Storage temperature
PD (Note 1)
200
mW
Tch
150
°C
Tstg
−55 to 150
°C
JEDEC JEITA TOSHIBA
― ― 2-2J1C
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 6.8 mg (typ.)
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note1: Total rating
Marking
6
5
4
KZ
1
2
3
Equivalent Circuit (top view)
654
Q1 Q2
123
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