SSM6P35FU
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM6P35FU
○ High-Speed Switching Applications ○ An...
SSM6P35FU
TOSHIBA Field-Effect
Transistor Silicon P-Channel MOS Type
SSM6P35FU
○ High-Speed Switching Applications ○ Analog Switch Applications
1.2-V drive Low ON-resistance : Ron = 44 Ω (max) (@VGS = -1.2 V)
: Ron = 22 Ω (max) (@VGS = -1.5 V) : Ron = 11 Ω (max) (@VGS = -2.5 V) : Ron = 8 Ω (max) (@VGS = -4.0 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25˚C) (Common to the Q1, Q2)
Characteristics
Symbol
Rating
Unit
Drain–source voltage Gate–source voltage
Drain current
DC Pulse
VDSS VGSS
ID IDP
-20
V
±10
V
-100 mA
-200
1.SOURCE 1 2.GATE 1 3.DRAIN 2
4.SOURCE 2 5.GATE 2 6.DRAIN 1
Drain power dissipation
PD (Note 1)
200
mW
JEDEC
-
Channel temperature
Tch
150
°C
JEITA
-
Storage temperature
Tstg
-55 to 150
°C
TOSHIBA
2-2J1C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
Weight: 6.8 mg (typ.)
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: Total rating
Marking
6
5
4
Equivalent Circuit (top view)
6
5
4
PZ
1
2
3
Q1 Q2
1
2
...