SSM3K7002AFU

SSM3K7002AFU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM3K7002AFU High-Speed Switching Applications Analog Switch Applications Small package Low ON-resistance : Ron = 3.3 Ω (max) (@VGS = 4.5 V) : Ron = 3.2 Ω (max) (@VGS = 5 V) : Ron = 3.0 Ω (max) (@VGS = 10 V) 2.1±0.1 1.25±0.1 +0.1 0.3-0 3 0~0.1 Unit: mm 0.65 0.65 2.0±0.2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP PD (Note 1) Tch Tstg Rating 60 ± 20 200 800 150 150 −55 to 150 Unit V V mA mW °C °C 1.3±0.1 1 2 0.90±0.1 Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: mounted on FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.6mm × 3) 0.6 mm 1.0 mm Note: USM JEDEC JEITA TOSHIBA 0.7 1. Gate 2. Source 3. Drain SC-70 2-2E1E Weight: 6 mg (typ.) Electrical Characteristics (T...