SSM5P15FU

SSM5P15FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM5P15FU High Speed Switching Applications Analog Switch Applications Small package Low ON resistance : Ron = 12 Ω (max) (@VGS = −4 V) : Ron = 32 Ω (max) (@VGS = −2.5 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage Gate-Source voltage Drain current DC Pulse Power dissipation (Ta = 25°C) Channel temperature Storage temperature range VDS −30 V VGSS ±20 V ID −100 mA IDP −200 PD (Note 1) 200 mW Tch 150 °C Tstg −55 to 150 °C 1: Gate1 2: Source 3: Gate2 4: Drain2 5: Drain1 Note: Using continuously under heavy loads (e.g. the application of JEDEC ― high temperature/current/voltage and the significant change in JEITA ― temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. TOSHIBA 2-2L1B operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Weight: 0.006g(typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating. Marking 5 Equivalent Circuit (top view) 4 5 4 DQ Q1 Q2 1 2 3 1 2 3 Handling Precaution When handling individual devices (which are not yet m...