SSM3K36FS

SSM3K36FS TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM3K36FS ○ High-Speed Switching Applications 1.5-V drive Low ON-resistance : Ron = 1.52 Ω (max) (@VGS = 1.5 V) : Ron = 1.14 Ω (max) (@VGS = 1.8 V) : Ron = 0.85 Ω (max) (@VGS = 2.5 V) : Ron = 0.66 Ω (max) (@VGS = 4.5 V) : Ron = 0.63 Ω (max) (@VGS = 5.0 V) Unit: mm Absolute Maximum Ratings (Ta = 25 °C) Characteristics Symbol Rating Unit Drain-source voltage VDS 20 V Gate-source voltage VGSS ± 10 V Drain current DC ID 500 mA Pulse IDP 1000 Drain power dissipation PD (Note 1) 150 mW Channel temperature Storage temperature range Tch 150 °C Tstg −55 to 150 °C JEDEC ― Note: Using continuously under heavy loads (e.g. the application of high JEITA ― temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the TOSHIBA 2-2H1B reliability significantly even if the operating conditions (i.e. operating Weight: 2.4 mg (typ.) temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/ “Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.36 mm2 × 3) Marking 3 NX 1 2 Equivalent Circuit (top view) 3 1 2 © 2020 1 Toshiba...