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SSM3K35FS Dataheets PDF



Part Number SSM3K35FS
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Datasheet SSM3K35FS DatasheetSSM3K35FS Datasheet (PDF)

SSM3K35FS TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K35FS ○ High-Speed Switching Applications ○ Analog Switch Applications • 1.2-V drive • Low ON-resistance: Ron = 20 Ω (max) (@VGS = 1.2 V) : Ron = 8 Ω (max) (@VGS = 1.5 V) : Ron = 4 Ω (max) (@VGS = 2.5 V) : Ron = 3 Ω (max) (@VGS = 4.0 V) Unit: mm Absolute Maximum Ratings (Ta = 25˚C) Characteristics Symbol Rating Unit Drain–source voltage VDSS 20 V Gate–source voltage VGSS ±10 V Drain current DC ID Pulse I.

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SSM3K35FS TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K35FS ○ High-Speed Switching Applications ○ Analog Switch Applications • 1.2-V drive • Low ON-resistance: Ron = 20 Ω (max) (@VGS = 1.2 V) : Ron = 8 Ω (max) (@VGS = 1.5 V) : Ron = 4 Ω (max) (@VGS = 2.5 V) : Ron = 3 Ω (max) (@VGS = 4.0 V) Unit: mm Absolute Maximum Ratings (Ta = 25˚C) Characteristics Symbol Rating Unit Drain–source voltage VDSS 20 V Gate–source voltage VGSS ±10 V Drain current DC ID Pulse IDP 180 mA 360 Drain power dissipation PD 100 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to 150 °C JEDEC - Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEITA - temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum TOSHIBA 2-2H1B Weight: 2.4 mg (typ.) ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current Drain–source breakdown voltage Drain cutoff current Gate threshold voltage Forward transfer admittance Drain–source ON-resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Drain–source forward voltage Note 1: Pulse test IGSS V (BR) DSS IDSS Vth ⏐Yfs⏐ RDS (ON) Ciss Crss Coss ton toff VDSF VGS = ±10 V, VDS = 0V ID = 0.1 mA, VGS = 0V VDS = 20 V, VGS = 0V ⎯ ⎯ ±10 μA 20 ⎯ ⎯ V ⎯ ⎯ 1 μA VDS = 3 V, ID = 1 mA 0.4 ⎯ 1.0 V VDS = 3 V, ID = 50 mA (Note 1) 115 ⎯ ⎯ mS ID = 50 mA, VGS = 4 V (Note 1) ⎯ 1.5 3 ID = 50 mA, VGS = 2.5 V (Note 1) ⎯ 2 4 Ω ID = 5 mA, VGS = 1.5 V (Note 1) ⎯ 3 8 ID = 5 mA, VGS = 1.2 V (Note 1) ⎯ 5 20 ⎯ 9.5 ⎯ VDS = 3 V, VGS = 0V, f = 1 MHz ⎯ 4.1 ⎯ pF ⎯ 9.5 ⎯ VDD = 3 V, ID = 50 mA, VGS = 0 to 2.5 V ⎯ 115 ⎯ ns ⎯ 300 ⎯ ID = - 180 mA, VGS = 0V (Note 1) ⎯ -0.9 -1.2 V Start of commercial production 2008-02 1 2014-03-01 Switching Time Test Circuit (a) Test Circuit (b) VIN 2.5 V IN 0 10 μs VDD = 3 V Duty ≤ 1% VIN: tr, tf < 5 ns (Zout = 50 Ω) Common Source Ta = 25°C 50 Ω OUT RL VDD (c) VOUT SSM3K35FS 2.5 V 0V VDD VDS (ON) 10% 90% 10% 90% tr tf ton toff Marking 3 Equivalent Circuit (top view) 3 KZ 1 2 1 2 Usage Considerations Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (1 mA for the SSM3K35FS). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on). Take this into consideration when using the device. Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 2 2014-03-01 Drain current ID (mA) ID – VDS 400 10 V 4 V 2.5 V Common Source Ta = 25°C 300 1.8 V 200 100 0 0 1.5 V VGS = 1.2 V 0.5 1 1.5 2 Drain–source voltage VDS (V) Drain current ID (mA) SSM3K35FS 1000 100 Common Source VDS = 3 V ID – VGS Ta = 100°C 10 25°C 1 −25°C 0.1 0.01 0 1 2 3 Gate–source voltage VGS (V) Drain–source ON-resistance RDS (ON) (Ω) RDS (ON) – VGS 10 Common Source ID = 5 mA 5 25°C Ta = 100°C −25°C 0 0 2 4 6 8 10 Gate–source voltage VGS (V) Drain–source ON-resistance RDS (ON) (Ω) RDS (ON) – VGS 10 Common Source ID = 50 mA 5 25°C Ta = 100°C −25°C 0 0 2 4 6 8 10 Gate–source voltage VGS (V) RDS (ON) – ID 10 Common Source Ta = 25°C RDS (ON) – Ta 10 Common Source Drain–source ON-resistance RDS (ON) (Ω) VGS = 1.2 V 5 1.5 V 2.5 V 4V 0 1 10 100 Drain current ID (mA) 1000 VGS = 1.2 V, ID = 5 mA 5 1.5 V, 5 mA 2.5 V, 50 mA 4 V, 50 mA 0 −50 0 50 100 150 Ambient temperature Ta (°C) 3 2014-03-01 Drain–source ON-resistance RDS (ON) (Ω) Gate threshold voltage Vth (V) Vth – Ta 1.0 Common Source ID = 1 mA VDS = 3 V 0.5 0 −50 0 50 100 150 Ambient temperature Ta (°C) Forward transfer admittance ⎪Yfs⎪ (mS) SSM3K35FS 1000 500 300 100 50 30 10 5 3 1 1 ⎪Yfs⎪ – ID Common Source VDS = 3 V Ta = 25°C 10 100 1000 Drain current ID (mA) Drain reverse current IDR (mA) 1000 100 Common Source VGS = 0 V D IDR .


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