Document
SSM3K35FS
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM3K35FS
○ High-Speed Switching Applications ○ Analog Switch Applications
• 1.2-V drive • Low ON-resistance: Ron = 20 Ω (max) (@VGS = 1.2 V)
: Ron = 8 Ω (max) (@VGS = 1.5 V) : Ron = 4 Ω (max) (@VGS = 2.5 V) : Ron = 3 Ω (max) (@VGS = 4.0 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25˚C)
Characteristics
Symbol
Rating
Unit
Drain–source voltage
VDSS
20
V
Gate–source voltage
VGSS
±10
V
Drain current
DC
ID
Pulse
IDP
180 mA
360
Drain power dissipation
PD
100
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to 150
°C
JEDEC
-
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
JEITA
-
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
TOSHIBA
2-2H1B
Weight: 2.4 mg (typ.)
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate leakage current Drain–source breakdown voltage Drain cutoff current Gate threshold voltage Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time Turn-off time
Drain–source forward voltage
Note 1: Pulse test
IGSS V (BR) DSS
IDSS Vth ⏐Yfs⏐
RDS (ON)
Ciss Crss Coss ton toff VDSF
VGS = ±10 V, VDS = 0V ID = 0.1 mA, VGS = 0V VDS = 20 V, VGS = 0V
⎯
⎯
±10
μA
20
⎯
⎯
V
⎯
⎯
1
μA
VDS = 3 V, ID = 1 mA
0.4
⎯
1.0
V
VDS = 3 V, ID = 50 mA
(Note 1) 115 ⎯
⎯
mS
ID = 50 mA, VGS = 4 V
(Note 1) ⎯
1.5
3
ID = 50 mA, VGS = 2.5 V
(Note 1)
⎯
2
4
Ω
ID = 5 mA, VGS = 1.5 V
(Note 1) ⎯
3
8
ID = 5 mA, VGS = 1.2 V
(Note 1) ⎯
5
20
⎯
9.5
⎯
VDS = 3 V, VGS = 0V, f = 1 MHz
⎯
4.1
⎯
pF
⎯
9.5
⎯
VDD = 3 V, ID = 50 mA, VGS = 0 to 2.5 V
⎯ 115 ⎯
ns
⎯
300
⎯
ID = - 180 mA, VGS = 0V
(Note 1) ⎯
-0.9 -1.2
V
Start of commercial production
2008-02
1
2014-03-01
Switching Time Test Circuit
(a) Test Circuit
(b) VIN
2.5 V IN
0
10 μs
VDD = 3 V Duty ≤ 1% VIN: tr, tf < 5 ns (Zout = 50 Ω) Common Source Ta = 25°C
50 Ω
OUT
RL
VDD (c) VOUT
SSM3K35FS
2.5 V
0V VDD VDS (ON)
10%
90%
10%
90%
tr
tf
ton
toff
Marking
3
Equivalent Circuit (top view)
3
KZ
1
2
1
2
Usage Considerations
Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (1 mA for the SSM3K35FS). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on). Take this into consideration when using the device.
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.
2
2014-03-01
Drain current ID (mA)
ID – VDS
400 10 V 4 V 2.5 V
Common Source Ta = 25°C
300 1.8 V
200
100
0 0
1.5 V
VGS = 1.2 V
0.5
1
1.5
2
Drain–source voltage VDS (V)
Drain current ID (mA)
SSM3K35FS
1000 100
Common Source VDS = 3 V
ID – VGS
Ta = 100°C 10
25°C 1
−25°C
0.1
0.01
0
1
2
3
Gate–source voltage VGS (V)
Drain–source ON-resistance RDS (ON) (Ω)
RDS (ON) – VGS
10 Common Source
ID = 5 mA
5
25°C Ta = 100°C
−25°C
0
0
2
4
6
8
10
Gate–source voltage VGS (V)
Drain–source ON-resistance RDS (ON) (Ω)
RDS (ON) – VGS
10 Common Source
ID = 50 mA
5
25°C Ta = 100°C
−25°C
0
0
2
4
6
8
10
Gate–source voltage VGS (V)
RDS (ON) – ID
10 Common Source
Ta = 25°C
RDS (ON) – Ta
10
Common Source
Drain–source ON-resistance RDS (ON) (Ω)
VGS = 1.2 V 5
1.5 V
2.5 V 4V
0 1
10
100
Drain current ID (mA)
1000
VGS = 1.2 V, ID = 5 mA 5
1.5 V, 5 mA 2.5 V, 50 mA
4 V, 50 mA
0
−50
0
50
100
150
Ambient temperature Ta (°C)
3
2014-03-01
Drain–source ON-resistance RDS (ON) (Ω)
Gate threshold voltage Vth (V)
Vth – Ta
1.0 Common Source ID = 1 mA VDS = 3 V
0.5
0
−50
0
50
100
150
Ambient temperature Ta (°C)
Forward transfer admittance ⎪Yfs⎪ (mS)
SSM3K35FS
1000 500 300
100 50 30
10 5 3
1 1
⎪Yfs⎪ – ID
Common Source
VDS = 3 V Ta = 25°C
10
100
1000
Drain current ID (mA)
Drain reverse current IDR (mA)
1000 100
Common Source VGS = 0 V
D IDR
.