SSM3K44MFV
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K44MFV
High Speed Switching Applications Anal...
SSM3K44MFV
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type
SSM3K44MFV
High Speed Switching Applications Analog Switch Applications
Unit: mm
0.32±0.05
AEC-Q101 qualified (Note 1) Compact package suitable for high-density mounting Low ON-resistance : RDS(ON) = 4.0 Ω (max) (@VGS = 4 V)
: RDS(ON) = 7.0 Ω (max) (@VGS = 2.5 V)
0.22±0.05
1.2±0.05 0.8±0.05
1.2±0.05 0.8±0.05 0.4 0.4
Note 1: For detail information, please contact to our sales.
Absolute Maximum Ratings (Ta = 25°C)
1 3
2
0.13±0.05
Characteristics
Symbol
Rating
Unit
0.5±0.05
Drain-source voltage
VDSS
30
V
Gate-source voltage
VGSS
±20
V
Drain current
DC
ID
Pulse
IDP
100 mA
200
Drain power dissipation (Ta = 25°C)
PD (Note 1)
150
mW
VESM
1. Gate 2. Source 3. Drain
Channel temperature Storage temperature
Tch
150
°C
JEDEC
―
Tstg
−55 to 150
°C
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
TOSHIBA
2-1L1B
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
Weight: 1.5 mg (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated...