SSM5H08TU

SSM5H08TU Silicon N Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode SSM5H08TU DC-DC Converter Nch MOSFET and schottky diode combined in one package Low RDS (ON) and low VF Unit: mm Absolute Maximum Ratings (Ta = 25°C) MOSFET Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP (Note 2) PD (Note 1) t = 10s Tch Rating 20 ±12 1.5 6.0 0.5 0.8 150 Unit V V A Drain power dissipation Channel temperature W °C DIODE Absolute Maximum Ratings (Ta = 25°C) SCHOTTKY Characteristics Maximum (peak) reverse voltage Reverse voltage Average forward current Peak one cycle surge forward current (non-repetitive) Junction temperature Symbol VRM VR IO IFSM Tj Rating 25 20 0.5 2 (50 Hz) 125 Unit V V A A °C UFV JEDEC JEITA TOSHIBA ⎯ ⎯ 2-2R1A Weight: 7 mg (typ.) Absolute Maximum Ratings (Ta = 25°C) MOSFET, DIODE COMMON Characteristics Storage temperature Operating temperature Symbol Tstg Topr (Note 3) Rating −55~125 −40~100 Unit °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and M...