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SSM5H07TU Dataheets PDF



Part Number SSM5H07TU
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon Epitaxial Schottky Barrier Diode
Datasheet SSM5H07TU DatasheetSSM5H07TU Datasheet (PDF)

SSM5H07TU Silicon N Channel MOS Type (π-MOSⅣ)/Silicon Epitaxial Schottky Barrier Diode SSM5H07TU DC-DC Converter • • Nch MOSFET and schottky diode combined in one package Low RDS (ON) and low VF Unit: mm Absolute Maximum Ratings (Ta = 25°C) MOSFET Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP (Note 2) PD (Note 1) t = 10s Tch Rating 20 ±12 1.2 2.4 0.5 0.8 150 Unit V V A Drain power dissipation Channel temperature W °C DIODE Absolute M.

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SSM5H07TU Silicon N Channel MOS Type (π-MOSⅣ)/Silicon Epitaxial Schottky Barrier Diode SSM5H07TU DC-DC Converter • • Nch MOSFET and schottky diode combined in one package Low RDS (ON) and low VF Unit: mm Absolute Maximum Ratings (Ta = 25°C) MOSFET Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP (Note 2) PD (Note 1) t = 10s Tch Rating 20 ±12 1.2 2.4 0.5 0.8 150 Unit V V A Drain power dissipation Channel temperature W °C DIODE Absolute Maximum Ratings (Ta = 25°C) SCHOTTKY Characteristics Maximum (peak) reverse voltage Reverse voltage Average forward current Peak one cycle surge forward current (non-repetitive) Junction temperature Symbol VRM VR IO IFSM Tj Rating 15 12 0.5 2 (50 Hz) 125 Unit V V A A °C UFV JEDEC JEITA TOSHIBA ⎯ ⎯ 2-2R1A Weight: 7 mg (typ.) Absolute Maximum Ratings (Ta = 25°C) MOSFET, DIODE COMMON Characteristics Storage temperature Operating temperature Symbol Tstg Topr (Note 3) Rating −55~125 −40~85 Unit °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm2) Note 2: Pulse width limited by max channel temperature Note 3: Operating temperature limited by max channel temperature and max junction temperature 1 2007-11-01 SSM5H07TU Marking Equivalent Circuit 5 4 5 4 KEL 1 2 3 1 2 3 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. 2 2007-11-01 SSM5H07TU MOSFET Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Drain-Source breakdown voltage Drain Cut-off current Gate threshold voltage Forward transfer admittance Drain-Source on-resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol IGSS V (BR) DSS IDSS Vth |Yfs| RDS (ON) Ciss Crss Coss ton toff Test Condition VGS = ±20 V, VDS = 0 ID = 1 mA, VGS = 0 VDS = 20 V, VGS = 0 VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 0.75 A ID = 0.6 A, VGS = 10 V ID = 0.6 A, VGS = 4 V (Note 4) (Note 4) (Note 4) Min ⎯ 20 ⎯ 1.1 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ 1.1 240 400 36 10 30 21 8 Max ±1 ⎯ 1 2.3 ⎯ 320 540 ⎯ ⎯ ⎯ ⎯ ⎯ Unit μA V μA V S mΩ pF pF pF ns VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz VDD = 10 V, ID = 0.6 A VGS = 0~2.5 V, RG = 4.7 Ω Note 4: Pulse measurement Switching Time Test Circuit (a) Test circuit 4 V 0 10 μs OUT VDD = 10 V RG = 4.7 Ω Duty < = 1% VIN: tr, tf < 5 ns Common source Ta = 25°C (b) VIN 2.5 V 10% 90% IN RG 0V (c) VOUT VDD 90% 10% tr ton toff tf VDD VDS (ON) Precaution Vth can be expressed as voltage between gate and source when the low operating current value is ID = 100 μA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on)) Be sure to take this into consideration when using the device. 3 2007-11-01 SSM5H07TU Schottky Diode Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Reverse current Total capacitance Symbol VF (1) VF (2) IR CT IF = 0.3 A IF = 0.5 A VR = 12V VR = 0 V, f = 1 MHz Test Condition Min Typ. 0.33 0.37 ⎯ 80 Max 0.39 0.43 100 ⎯ Unit V V μA pF ⎯ ⎯ ⎯ ⎯ Precaution The schottky barrier diodes of this product have large-reverse-current-leakage characteristics compared to other switching diodes. This current leakage and improper operating temperature or voltage may cause thermal runaway resulting in breakdown. Take forward and reverse loss into consideration in radiation design and safety design. 4 2007-11-01 SSM5H07TU MOS Electrical Characteristics Graph ID – VDS 2.5 Common Source Ta = 25°C 100 Common Source VDS = 5 V ID – VGS (A) 2 6V 1.5 4V (mA) Drain Current ID VGS = 10 V 10 Drain Current ID 1 0.1 Ta = 100°C 0.01 −25°C 25°C 1 3V 0.5 2.5 V 0 0.001 0 0.4 0.8 1.2 1..


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