SSM5H06FE

SSM5H06FE Silicon N Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode SSM5H06FE DC-DC Converter Combined Nch MOSFET and Schottky Diode in one Package. Small package Unit: mm 1.6±0.05 1.2±0.05 0.2±0.05 Absolute Maximum Ratings (Ta = 25°C) MOSFET 1.6±0.05 1.0±0.05 0.5 Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature DC Pulse Symbol VDS VGSS ID IDP (Note 2) PD (Note 1) Tch Rating 20 ±10 100 200 150 150 Unit V V mA mW °C 1 2 3 5 0.5 4 0.12±0.05 4.Cathode 5.Drain ⎯ ⎯ 2-2P1C Absolute Maximum Ratings (Ta = 25°C) SCHOTTKY DIODE Characteristics Maximum (peak) reverse voltage Reverse voltage Average forward current Peak one cycle surge forward current (non-repetitive) Junction temperature Symbol VRM VR IO IFSM Tj Rating 15 12 100 1 (50 Hz) 125 Unit V V mA A °C ESV 1.Gate 2.Source 3.Anode JEDEC JEITA TOSHIBA Absolute Maximum Ratings (Ta = 25°C) MOSFET, DIODE COMMON Characteristics Storage temperature Operating temperature Symbol Tstg Topr (Note 3) Rating −55~125 −40~100 Unit °C °C Weight: 3 mg (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing t...