SSM6E01TU

SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type (U-MOS II) + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications · · P-channel MOSFET and N-channel MOSFET incorporated into one package. Low power dissipation due to P-channel MOSFET that features low RDS (ON) and low-voltage operation Unit: mm Q1 Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP (Note 2) Rating -12 ±12 -1.0 -2.0 Unit V V A Q2 Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP (Note 2) Rating 20 10 0.05 0.2 Unit V V A JEDEC JEITA TOSHIBA Weight: 7.0 mg (typ.) ― ― ― Maximum Ratings (Q1, Q2 common) (Ta = 25°C) Characteristics Drain power dissipation Channel temperature Storage temperature range Symbol PD (Note 1) Tch Tstg Rating 0.5 150 -55~150 Unit W °C °C 2 Note 1: Mounted on an FR4 board (25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 645 mm ) Note 2: Pulse width limited by maximum channel temperature. Marking 6 5 4 Equivalent Circuit (top view) 6 5 4 Q1 KTA 1 2 3 1 Q2 2 3 1 2003-01-16 SSM6E01TU Handling Precaution This product has a MOS structure and is sensitive to electrostatic discharge. When handling individual devices (that have not yet been mounted on a PCB), ensure that the environment is protected against static electricity. Operators should wear anti-static clothing, containers and other objects which may come i...