Document
MOSFETs Silicon N-Channel MOS
SSM6N57NU
1. Applications
• Power Management Switches • DC-DC Converters
2. Features
(1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) = 39.1 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 53 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 82 mΩ (max) (@VGS = 1.8 V)
3. Packaging and Internal Circuit
UDFN6
SSM6N57NU
1. Source1 (S1) 2. Gate1 (G1) 3. Drain2 (D2) 4. Source2 (S2) 5. Gate2 (G2) 6. Drain1 (D1)
©2019-2021
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
2012-07
2021-09-17 Rev.4.0
SSM6N57NU
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25�) (Q1,Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage
VDSS
30
V
VGSS
±12
Drain current (DC)
(Note 1)
ID
4
A
Drain current (pulsed)
(Note 1), (Note 2)
IDP
10
Power dissipation Power dissipation Channel temperature
(Note 3)
PD
t ≤ 10 s
(Note 3)
PD
Tch
1
W
2
W
150
�
Storage temperature
Tstg
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Ensure that the channel temperature does not exceed 150�. Note 2: Pulse width (PW) ≤ 10 ms, duty ≤ 1% Note 3: PD for the entire IC
Device mounted on a 25.4 mm × 25.4 mm × 1.6 mm FR4 glass epoxy board (Cu pad: 645 mm2)
Note: Note:
The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge. The channel-to-ambient thermal resistance, Rth(ch-a), and the power dissipation, PD, vary according to the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account.
©2019-2021
2
Toshiba Electronic Devices & Storage Corporation
2021-09-17 Rev.4.0
SSM6N57NU
5. Electrical Characteristics 5.1. Static Characteristics (Ta = 25� unless otherwise specified)(Q1,Q2 Common)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate leakage current Drain cut-off current Drain-source breakdown voltage Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance
Forward transfer admittance
IGSS VGS = ±10 V, VDS = 0 V IDSS VDS = 24 V, VGS = 0 V V(BR)DSS ID = 1 mA, VGS = 0 V (Note 1) V(BR)DSX ID = 1 mA, VGS = -12 V (Note 2) Vth VDS = 3 V, ID = 1 mA (Note 3) RDS(ON) ID = 2.0 A, VGS = 4.5 V
ID = 1.0 A, VGS = 2.5 V ID = 0.5 A, VGS .